Agilent Technologies provides MMIC diodes ideal for microwave radio, aerospace and defense, and instrumentation applications.

Product Ranges :

• HSCH-9161 Millimeter Wave Zero Bias GaAs Schottky Diodeis a discrete, beam lead GaAs diode.
• HSCH-9162 Millimeter Wave Zero Bias GaAs Schottky Diode is a discrete, beam lead GaAs diode

Millimeter-wave and Microwave GaAs Schottky Diodes

Agilent MMIC

MMIC GaAs Diodes

Avago's multi-market wireless solutions include an extensive portfolio of Silicon bipolar transistors and discrete GaAs FETs, as well as high-performance, low-cost millimeter wave MMICs for a wide range of DC to 50-GHz RF and 10- to 40-Gb/s.

It boasts the broadest portfolio of surface-mount PIN diodes for the cellular/PCS base station, WLAN, CATV, LNB and other wireless communications markets. In addition, Avago's series of surface-mount Schottky diodes feature low turn-on voltage and capacitance, and provide the most consistent performance available. Its wide range of GaAs and Silicon RFICs come in a variety of industry

Millimeter Wave and Microwave Devices

• Amplifiers
• Attenuators
• Frequency Multipliers
• Mixers
• Prescalers
• Switches
• Demonstration Circuit Boards

RFICs (Including Amplifiers and Mixers)

• GaAs RFICs
• Silicon RFICs

PIN Diodes

• Axial Glass Packaged PIN Diodes
• Microwave PIN Diodes
• Surface Mount PIN Diodes
• Demonstration Circuit Boards

Schottky Diodes

• Axial Glass Packaged Schottky Diodes
• Millimeter Wave and Microwave Beam Lead Schottky Diodes
• Surface Mount Schottky Diodes
• Demonstration Circuit Boards

Discrete Transistors

• GaAs Field Effect Transistors
• Silicon Bipolar Transistors
• Demonstration Circuit Boards

RF & Microwave Products More...

Avago Technologies

RF & Microwave Products

Medium to High power, highly reliable GaAs FET designed for various RF and microwave applications.

Hexawave

GaAs Power MESFET

MMIC - Transistors - Diodes

Infineon RF

MMIC - Transistors - Diodes

Skyworks Solutions offers a select group of diodes from our overall diode offering in stock and ready for immediate design into your demanding applications.

Product range :

• Varactor
• PIN Diodes
• Limiter
• Schottky
• VCO

Skyworks Inc

Diodes

Transistors - Power Transitors

Philips

Transistors - Power Transitors

Power GaAs FETs and Power GaAs MMIC Toshiba product line.

Power GaAs FETs:

• L, S-band partially Matched
• c-Band internally Matched
• X, Ku-Band internally Matched
• Medium Power

Power GaAs MMIC

Toshiba MW

Microwave Products

Transcom manufactures low cost medium power GaAsFETS and PHEMT MMICs for applications such as GSM/WLAN/VSAT/Bluetooth and point to point radios.

Transcom's GaAs FETs product line offers devices with gate width of 160 um, 300 um, 600 um, 1.2 mm, 2.4 mm, 5 mm and 12 mm. All small signal devices are processed with 0.25 um gate. Devices with gate width larger than 1.2 mm can be processed with either 0.25 um or 0.5 um gate. This provides the flexibility for improving yield, and lowering cost, when devices are needed only for low frequency operation.
Our PHEMT devices are fabricated with a proven technology that demonstrates both low noise and high dynamic range. Device performance has been proven to be among the best in the industry.

Based on our PHEMT technology, Transcom has successfully developed product lines of MMICs. These MMICs include a 1W Ku-Band MMIC, a 2.4 GHz 1W MMIC and a 2.4 GHz 2W MMIC. Detail information on these MMICs can be found in our product data section. The 2.4 GHz MMIC is now in full production as well as the Ku-Band MMIC.

Besides GaAs FETs & MMICs, Transcom also has the in house design capability for sub-system development. Our standard amplifier products include wide band fiber optic driver, C-band and Ku-band medium to high power amplifiers.

Besides standard products, Transcom also offers MMIC foundry services. Customers can provide their own designs using our foundry rule. If necessary, Transcom also can provide a complete turn-key package to meet customers specific needs.

Transcom

GaAs FETs & MMICs